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| APM4420 N-Channel Enhancement Mode MOSFET Features * * * * 30V/12.5A, RDS(ON)=6m(typ.) @ VGS=10V RDS(ON)=10m(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package PinDescription S S S G 1 2 3 4 8 7 6 5 D D D D SO - 8 D Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems . G S Ordering and Marking Information APM4420 Handling Code Temp. Range Package Code N-Channel MOSFET Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 125C Handling Code TU : Tube TR : Tape & Reel APM4420 K : APM4420 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 30 20 12.5 50 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 1 www.anpec.com.tw APM4420 Absolute Maximum Ratings Cont. Symbol PD TJ T STG R jA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient T A=25C T A=100C (TA = 25C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W C C C/W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) a VSDa Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss b (TA = 25C unless otherwise noted) APM4420 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain C t Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V, ID=250A VDS=24V , VGS=0V VDS=VGS, ID=250A VGS=16V, VDS=0V VGS=10V, ID=12.5A VGS=4.5V, ID=7A ISD=2.3A, VGS=0V VDS=15V, ID=12.5A VGS=5V, 30 1 1 6 10 0.6 3 100 9 13 1.3 V A V nA m V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance 28 8 5 13 36 nC 20 15 66 28 pF ns VDD=15V, ID=1A, VGEN=10V, RG=6, RL=15 VGS=0V 9 43 14 3200 680 275 VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width 300s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 2 www.anpec.com.tw APM4420 Typical Characteristics Output Characteristics 50 VGS=5,6,7,8,9,10V Transfer Characteristics 50 IDS-Drain Current (A) VGS=4V 30 20 IDS-Drain Current (A) 40 40 30 20 TJ=25C TJ=-55C TJ=125C 10 V GS=3V 10 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.4 IDS=250A On-Resistance vs. Drain Current 0.016 VGS(th)-Thershold Voltage (V) (Normalized) 1.2 1.0 0.8 0.6 0.4 0.2 -50 RDS(ON)-On-Resistance () 0.014 0.012 0.010 0.008 0.006 0.004 0.002 V GS=4.5V V GS=10V -25 0 25 50 75 100 125 150 0.000 0 10 20 30 40 50 Tj-Junction Temperature (C) IDS-Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 3 www.anpec.com.tw APM4420 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.050 0.045 IDS=12.5A On-Resistaence vs. Junction Temperature 1.8 VGS=10V IDS=12.5A RDS (ON)-On-Resistance () 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance () (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (C) Gate Charge 10 Capacitance Characteristics 5000 VGS-Gate-to-Source Voltage (V) VDS=15V IDS = 12.5A C-Capacitance (pF) 8 4000 Ciss 6 3000 4 2000 2 1000 Coss Crss 0 0 10 20 30 40 50 60 70 80 90 0 0 5 10 15 20 25 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 4 www.anpec.com.tw APM4420 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 50 60 50 40 30 20 10 0 -2 10 Single Pulse Power ISD-Source Current (A) 10 TJ=150C TJ=25C 1 0.0 Power (W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 10 2 VSD-Source to Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 5 www.anpec.com.tw APM4420 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 6 www.anpec.com.tw APM4420 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 7 www.anpec.com.tw APM4420 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application SOP-8 Application SOP-8 A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 8 www.anpec.com.tw APM4420 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 9 www.anpec.com.tw |
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